These two concepts appear in the semiconductor process, the first semiconductor substrate polishing (substrate film) followed mechanical polishing, for example, magnesium oxide, zirconium oxide polishing, but the chip surface damage is severe. Until the late 1960s, a new polishing techniques - chemical mechanical polishing (CMP Chemical Mechanical Polishing) to replace the old method. CMP Technology combines the advantages of chemical and mechanical polishing: a simple chemical polishing, the polishing rate, surface finish and low injury, perfectly good, but the surface flatness and parallelism of the polished surface consistency; simple mechanical The polished surface consistency, surface flatness, but the surface finish, the damage depth. Chemical mechanical polishing can get a more perfect surface, can get a higher polishing rate and flatness obtained by two orders of magnitude higher than other methods, is the only effective way to achieve global planarization. 
 In accordance with the principle of machining, semiconductor materials engineering, material and chemical multiphase reaction theory of heterogeneous catalysis, surface engineering, semiconductor, chemical and basic theory, the mechanism of single crystal silicon-chip chemical mechanical polishing (CMP), the kinetically controlled process and influencing factors marked chemical mechanical polishing is a complex multiphase reaction, the existence of two dynamic processes: 
 (1) polishing first adsorbed on a polishing cloth, polishing liquid oxidant, catalyst and substrate tablets in the surface of the silicon atoms on the surface of the redox kinetics of the process. This is the main chemical reaction. 
 (2) polishing the surface of reactants from the silicon single crystal surface, the desorption process, the unreacted silicon single crystal is re-exposed to the dynamic process. It is another important process to control the polishing rate. 
 Silicon chemical mechanical polishing process is chemical reaction-based mechanical polishing process, to obtain good quality polished wafers, chemical corrosive effect of mechanical grinding effect to achieve a balance must be in the polishing process. Chemical corrosion is greater than the mechanical polishing effect, the polished wafer surface to produce corrosion pits, orange peel-like ripples. Mechanical grinding effect is greater than the chemical corrosion, the surface damage layer. 
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 Various types and specifications: 3.785 / bottle material: aluminum oxide, etc.; granularity: average granularity 1.3UM of; Uses: Suitable for glass, metal polishing.